Infineon IPP110N20N3GXKSA1: A 200V OptiMOS 5 Power MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. Addressing this challenge, Infineon Technologies' IPP110N20N3GXKSA1 stands out as a premier solution, a 200V N-channel Power MOSFET engineered from the ground up using the advanced OptiMOS™ 5 technology. This device is specifically designed to set new benchmarks in performance for a wide array of power conversion applications.

At the heart of this MOSFET's superiority is its exceptionally low figure-of-merit (R DS(on) Q G). With a maximum on-state resistance (R DS(on)) of just 1.8 mΩ at 10 V, it minimizes conduction losses, allowing for more power to be delivered to the load with less energy wasted as heat. Simultaneously, its optimized gate charge (Q G) ensures rapid switching transitions, which drastically reduces switching losses. This dual achievement is critical for high-frequency operation, enabling designers to shrink the size of magnetic components and heat sinks, thereby increasing overall power density.

Housed in a robust TO-LL package, the IPP110N20N3GXKSA1 offers an excellent power-to-volume ratio. The package is designed for low parasitic inductance and features a separate source sense (Kelvin) connection. This fourth pin allows for a dedicated gate drive return path, isolating it from the high-current power loop. This significantly improves switching performance by minimizing gate oscillations and enabling cleaner, faster switching, which is paramount in reducing EMI and improving efficiency in demanding applications.

These applications are diverse and demanding, including:

Server & Telecom Power Supplies (SMPS): Where efficiency translates directly into lower operational costs and reduced cooling requirements.

Solar Inverters and Energy Storage Systems: Maximizing energy harvest and battery life through minimal losses.

Motor Control and Drives: Providing robust and efficient switching for industrial automation systems.

Synchronous Rectification: Its low R DS(on) makes it an ideal choice for replacing diodes in secondary-side rectification, boosting efficiency significantly.

ICGOOODFIND: The Infineon IPP110N20N3GXKSA1 exemplifies the pinnacle of power MOSFET design, offering a rare combination of ultra-low conduction loss, fast switching capability, and superior package technology. It is an indispensable component for engineers aiming to push the boundaries of efficiency and power density in their next-generation power conversion designs.

Keywords: OptiMOS 5, Low RDS(on), High-Efficiency, Power Density, Synchronous Rectification.