Infineon IPG20N10S4L-22A: High-Performance 100V OptiMOS 5 Power MOSFET

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this need, the Infineon IPG20N10S4L-22A stands out as a premier 100V N-channel power MOSFET engineered with the advanced OptiMOS™ 5 technology. This device is specifically designed to set new benchmarks in performance for a wide array of demanding applications, from industrial motor drives and power supplies to telecom systems and battery management.

A core strength of the IPG20N10S4L-22A lies in its exceptionally low figure-of-merit (FOM), which signifies an optimal balance between low on-state resistance (R DS(on)) and low gate charge (Q G). With a maximum R DS(on) of just 2.2 mΩ at 10 V V GS, this MOSFET minimizes conduction losses, allowing for more efficient power transfer and reduced heat generation. Concurrently, the low gate charge ensures swift switching transitions, which directly translates to lower switching losses, especially crucial in high-frequency operating circuits. This combination is the key to achieving higher overall system efficiency and enabling more compact designs through the potential for higher switching frequencies and reduced heatsinking requirements.

The device is housed in the space-efficient PG-TO263-3 (D2PAK) package, offering an excellent power-to-footprint ratio. This makes it an ideal choice for designers looking to save valuable PCB real estate without compromising on thermal performance or current handling capability. Furthermore, the OptiMOS 5 technology provides enhanced robustness and reliability, featuring a high avalanche ruggedness and an extended safe operating area (SOA), which ensures stable operation under strenuous conditions.

ICGOOODFIND: The Infineon IPG20N10S4L-22A is a superior 100V power MOSFET that exemplifies the benefits of OptiMOS 5 technology. Its industry-leading low R DS(on) and excellent switching characteristics make it a top-tier solution for engineers aiming to maximize efficiency and power density in their next-generation power conversion systems.

Keywords:

OptiMOS 5

Low R DS(on)

High Efficiency

Power Density

100V MOSFET