**HMC963LC4TR: A High-Performance 24 GHz to 44 GHz GaAs pHEMT MMIC Low Noise Amplifier**

The relentless drive for higher data rates and greater bandwidth in modern communication and radar systems has pushed operational frequencies firmly into the Ka-band and beyond. In this demanding landscape, the **HMC963LC4TR** stands out as a premier solution, a **monolithic microwave integrated circuit (MMIC)** low noise amplifier (LNA) engineered to deliver exceptional performance from **24 GHz to 44 GHz**.

Fabricated on a high-performance **Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT)** process, this amplifier is the cornerstone of sensitive receiver front-ends. The core of its value proposition is an outstanding combination of **ultra-low noise figure and high linearity**. With a remarkably low noise figure of **1.8 dB typical**, the HMC963LC4TR ensures that weak incoming signals are amplified with minimal degradation, preserving the integrity and signal-to-noise ratio (SNR) critical for system range and sensitivity.

Complementing its low-noise characteristics is its impressive gain performance. The amplifier provides a robust **18 dB of typical small-signal gain**, which remains exceptionally flat across the entire wide bandwidth. This high gain helps to suppress the noise contribution from subsequent stages in the receiver chain, further enhancing the overall system performance. Furthermore, the device maintains a high output third-order intercept point (OIP3) of +26 dBm typical, a key indicator of its **superior linearity**. This allows the LNA to handle strong interfering signals without generating significant intermodulation distortion, thereby preventing desensitization and maintaining signal clarity.

The HMC963LC4TR is designed for integration and ease of use. Housed in a leadless, RoHS-compliant 4x4 mm SMT package, it is suitable for high-volume automated assembly processes. It requires a positive bias supply and incorporates an active bias circuit for stable and consistent performance over temperature. The device is also internally matched to 50-Ohms, simplifying board-level design and reducing the need for extensive external matching components.

Typical applications for this high-performance LNA are found in the most advanced systems, including:

* **5G millimeter-wave infrastructure** and backhaul links.

* **Electronic Warfare (EW)** and **Electronic Countermeasures (ECM)** systems.

* **SATCOM** (Satellite Communication) terminals and phased-array radars.

* **Test and Measurement** equipment and sensors.

**ICGOOODFIND**: The HMC963LC4TR is a quintessential high-frequency LNA, masterfully balancing ultra-low noise, high gain, and exceptional linearity across a wide Ka-band spectrum. Its MMIC design and SMT packaging make it an indispensable and reliable component for designers pushing the boundaries of next-generation RF systems.

**Keywords**: **Ka-Band LNA**, **Low Noise Figure**, **GaAs pHEMT**, **High Linearity**, **MMIC Amplifier**.