Infineon IPP80N08S2L-07 OptiMOS 5 Power MOSFET: Key Features and Applications
The Infineon IPP80N08S2L-07 is a state-of-the-art N-channel Power MOSFET from the advanced OptiMOS™ 5 technology platform. Engineered for superior efficiency and robustness, this component is designed to meet the demanding requirements of modern power conversion systems. Its combination of low on-state resistance and high switching performance makes it an ideal choice for a wide array of applications.
Key Features
A standout attribute of this MOSFET is its exceptionally low gate charge (Qg) and low effective output capacitance (Coss eff), which are critical for minimizing switching losses in high-frequency circuits. This allows for higher switching frequencies, which in turn enables the design of smaller, more compact power supplies and converters.
The device boasts an ultra-low typical on-state resistance (RDS(on)) of just 1.8 mΩ at a gate-source voltage of 10 V. This remarkably low resistance directly translates to reduced conduction losses, leading to higher overall system efficiency and less thermal stress. Furthermore, it is characterized by a high current handling capability, supporting up to 80 A continuous drain current, which ensures reliability under heavy load conditions.
The IPP80N08S2L-07 is also housed in a TO-220 FullPAK package. This package offers a key advantage: its fully molded plastic construction provides full isolation between the heatsink and the tab of the package, simplifying the mechanical mounting process and enhancing safety by eliminating the need for an additional insulation kit.
Primary Applications
The superior performance characteristics of this MOSFET make it exceptionally well-suited for a diverse range of applications:
DC-DC Converters: Its high efficiency is crucial for both industrial and telecom SMPS (Switch-Mode Power Supplies).
Motor Control: It provides robust and efficient driving for motors in applications such as industrial automation, robotics, and e-bikes.
Synchronous Rectification: The low RDS(on) and fast switching speed are ideal for use in secondary-side rectification stages of modern power supplies.
Solar Inverters and Energy Storage Systems: Where maximizing energy harvest and conversion efficiency is paramount.
Battery Management Systems (BMS): Its low losses help in protecting against energy waste and managing thermal loads effectively.
ICGOOODFIND
The Infineon IPP80N08S2L-07 OptiMOS 5 MOSFET stands out as a premier solution for designers seeking to push the boundaries of power efficiency and power density. Its optimal blend of minimal switching and conduction losses, high current capability, and a fully isolated package makes it a versatile and highly reliable component for the next generation of energy-conscious power electronics.
Keywords: OptiMOS 5, Low RDS(on), High Efficiency, Power MOSFET, Synchronous Rectification
