Infineon IPC100N04S5L-1R9 40V OptiMOS 5 Power MOSFET for High-Efficiency Power Conversion

In the realm of modern power electronics, achieving higher efficiency, power density, and reliability is paramount. The Infineon IPC100N04S5L-1R9, a 40V OptiMOS™ 5 Power MOSFET, stands out as a premier solution engineered to meet these demanding requirements. This device is specifically designed to minimize power losses and enhance thermal performance, making it an ideal choice for a wide array of high-efficiency power conversion applications.

Built on Infineon’s advanced OptiMOS™ 5 technology platform, this MOSFET delivers exceptionally low RDS(on) of just 1.9 mΩ, significantly reducing conduction losses. This ultra-low on-resistance ensures that more energy is transferred to the load with minimal waste, which is critical in applications such as synchronous rectification in switched-mode power supplies (SMPS), DC-DC converters, and motor drive systems. The reduced power dissipation not only improves overall system efficiency but also alleviates thermal management challenges, allowing for more compact and cost-effective designs.

Another key advantage of the IPC100N04S5L-1R9 is its superior switching performance. The device features low gate charge (Qg) and low figures of merit (FOM), which contribute to reduced switching losses at high frequencies. This makes it particularly suitable for high-frequency switching applications where efficiency and thermal behavior are crucial. Designers can leverage these characteristics to push switching frequencies higher, thereby reducing the size of passive components like inductors and capacitors, and ultimately increasing power density.

The MOSFET’s enhanced ruggedness and reliability are also noteworthy. It offers excellent avalanche robustness and a high maximum current capability, ensuring stable operation under strenuous conditions. Moreover, its low thermal resistance and improved body diode performance make it resilient in repetitive avalanche and hard commutation scenarios, which are common in industrial and automotive environments.

Packaged in a space-saving D2PAK-7 (TO-263-7) format, the IPC100N04S5L-1R9 provides an optimal balance between performance and board space utilization. This package type also enhances cooling by offering an efficient thermal path, further supporting high-power applications.

ICGOOODFIND: The Infineon IPC100N04S5L-1R9 40V OptiMOS™ 5 MOSFET sets a high standard for power conversion efficiency through its ultra-low RDS(on), excellent switching characteristics, and robust construction. It is an outstanding choice for designers aiming to maximize performance in power-dense and thermally constrained applications.

Keywords:

Power Efficiency

OptiMOS 5 Technology

Low RDS(on)

High-Frequency Switching

Thermal Performance